STMicroelectronics has announced a significant expansion of its silicon carbide (SiC) manufacturing capacity to meet the rapidly growing demand for electric vehicle (EV) power systems. The investment will enhance ST's ability to supply the automotive industry with high-performance SiC components critical for next-generation EVs.

Key Aspects of the Manufacturing Expansion

The expansion focuses on ST's 200mm wafer fabrication facilities, with production capacity expected to triple by 2026. The company has invested in new crystal growth furnaces and epitaxy reactors specifically designed for SiC substrate production.

ST's SiC technology roadmap includes the development of 4th generation SiC MOSFETs, which will offer improved switching performance and reduced losses compared to previous generations. These advances are crucial for achieving higher efficiency and longer driving ranges in EVs.

Impact on EV Power Systems

Silicon carbide devices are essential for EV power systems because they can operate at higher voltages, temperatures, and switching frequencies than traditional silicon components. This results in more compact, efficient, and reliable power conversion systems for EVs.

Key applications include:

  • On-board chargers (OBC) for fast charging
  • DC-DC converters for power management
  • Inverters for motor control
  • High-voltage battery management systems

Market Implications

The automotive industry is transitioning rapidly towards electrification, with governments worldwide implementing stringent emissions regulations. ST's increased SiC manufacturing capacity positions the company to better serve major automotive OEMs and tier-1 suppliers.

According to industry analysts, SiC-based components are expected to be in the powertrain systems of over 60% of new EVs by 2030, up from less than 10% today. This growth trajectory justifies ST's significant investment in SiC manufacturing capacity.

Technical Advantages of ST's SiC Technology

ST's SiC MOSFETs offer several technical advantages over silicon-based alternatives:

  • Higher switching frequencies enable smaller passive components
  • Lower switching and conduction losses improve system efficiency
  • Higher temperature operation reduces cooling requirements
  • Higher voltage ratings allow for 800V system architectures

Our technical team at LiTong Group has extensive experience supporting customers implementing ST's wide-bandgap solutions. The expanded capacity will help ensure adequate supply for our customers' growing SiC design projects.

Supply Chain Considerations

With this expansion, ST aims to strengthen its supply chain resilience for SiC components. The company has also announced partnerships with substrate suppliers to secure the supply of high-quality SiC wafers, which are critical for maintaining device performance and reliability.

For our customers, this expansion means improved availability of ST's SiC solutions for automotive and industrial applications. We recommend engaging with our technical team early in your design process to ensure optimal component selection and availability planning.