ST Power Devices
STMicroelectronics offers a comprehensive portfolio of power semiconductors including low, medium, and high-voltage MOSFETs, IGBTs, and the latest wide-bandgap technologies like silicon carbide (SiC) and gallium nitride (GaN). Our power solutions address the needs of various applications from battery-powered devices to high-power industrial and automotive systems.
STPOWER MOSFETs
Low, medium, high-voltage solutions
STPOWER IGBTs
Ultra-fast, MDmesh, Trench technologies
Silicon Carbide (SiC)
Schottky diodes and MOSFETs
Gallium Nitride (GaN)
High-frequency power solutions
Power Management Advantages
Why choose ST's power management solutions
Energy Efficiency
Our power devices are designed with advanced technologies to minimize power losses and maximize energy efficiency in all applications.
Wide Product Range
From low-power consumer applications to high-power industrial inverters, we offer the right solution for every power requirement.
Advanced Packaging
Innovative packages like PowerFLAT and STOT-227 that offer improved thermal performance and space efficiency.
System Solution
Complete power solutions combining controllers, power devices, and protection ICs for rapid deployment.
Popular Power Device Series
Key products in our power device portfolio
| Part Number | Series | Type | Voltage (V) | Current (A) | Applications |
|---|---|---|---|---|---|
| STW11NM60ND | STPOWER MDmesh™ | MOSFET | 600 | 11 | Power adapters, SMPS |
| STGAP1S60K | STGAP | IGBT Driver | 1200 | 2 | Solar, industrial |
| STW20N150K6 | STPOWER MDmesh™ K6 | MOSFET | 1500 | 20 | High voltage SMPS |
| STP30N100Z | STPOWER SuperMESH3 | MOSFET | 1000 | 30 | Solar inverters |
| STW20N130K6 | STPOWER MDmesh™ K6 | MOSFET | 1300 | 20 | Power factor correction |
Selecting the Right Power Device
Key considerations for optimal power device selection
Choosing the correct power device is critical for system performance. Our technical team can help you select the optimal solution based on your specific requirements:
- Voltage requirements: Breakdown voltage for safe operation
- Current needs: Continuous and peak current ratings
- Switching frequency: Losses vary significantly with frequency
- Thermal constraints: Package thermal resistance and cooling options
- Cost targets: Balancing performance with budget constraints
- Application specifics: Automotive, industrial, or consumer requirements
Field Application Engineer Insight
Expert recommendations and application notes
SiC in High-Power Applications
SiC in High-Power Applications: Silicon Carbide MOSFETs are revolutionizing high-power applications like electric vehicle chargers and industrial power supplies. With their superior switching performance and ability to operate at higher temperatures, SiC devices can reduce system size by up to 50% compared to silicon equivalents. When designing with SiC, special attention must be paid to gate drive circuits due to different threshold voltage characteristics.
Frequently Asked Questions
Common questions about power devices
MDmesh technology is optimized for high-voltage applications (typically >500V) and offers the lowest specific on-resistance for a given die size. SuperMESH technology is designed for lower voltage applications and provides an optimal balance of on-resistance and gate charge, making it ideal for high-frequency switching applications.
Silicon Carbide devices are ideal for high-voltage applications (>600V) where their superior switching performance and temperature capabilities can justify the higher cost. They're particularly beneficial in applications requiring high efficiency at high frequency, such as high-power density power supplies and electric vehicle systems.
The key parameters include breakdown voltage (VDS), on-resistance (RDS(on)), gate charge (Qg), and thermal resistance. For switching applications, you should also consider switching times and safe operating area (SOA). For power efficiency, the primary concern is minimizing conduction losses (RDS(on)) and switching losses (Qg).